Integrated Thermopile Power Sensor Using μc-Si Thin Films

Multifunctional nanostructured Ti-Si-C thin films

In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multilayers, as well as their electrical, mechanical, and thermal-stabili...

High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target

We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film m...

In Situ Ordering of FePt Thin Films by Using Ag / Si and Ag / Mn 3 Si / Ag / Si Templates

In situ ordering of FePt thin films by sputtering onto Ag/Si and Ag/Mn3Si/Ag/Si templates has been demonstrated. Due to the evolution from island-like to a continuous film structure as a function of Ag thickness, the ordering and orientation of the FePt films both change with Ag thickness. A continuous (002) Ag film results in a greater L10 phase formation with -axis oriented both perpendicular...

Ti/Si thin films during ultra rapid thermal annealing

WC introduce a new technique for rapidly heating (10’ “C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from lo3 to lo6 “C/s. The temperature of ...

Growth and Characterization of Ti-Si-N Thin Films